Nexperia P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 PMXB75UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Length: 1.15mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Nexperia P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 PMXB75UPEZ
Specifications of Nexperia P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 PMXB75UPEZ | |
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