Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S402ATMA2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S402ATMA2
Specifications of Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S402ATMA2 | |
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