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STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z

About The 5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.85 A, 1000 V, 3-Pin IPAK STU2NK100Z, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 70 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.6mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z

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STMicroelectronics N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z
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