reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
MOSFETs
onsemi

Onsemi N-Channel MOSFET, 680 MA, 25 V, 3-Pin SOT-23 FDV303N

About The 65V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: +8 V, Number of Elements per Chip: 1, Height: 0.onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0

onsemi N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.65V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: +8 V, Number of Elements per Chip: 1, Height: 0.93mm, Length: 2.92mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 680 MA, 25 V, 3-Pin SOT-23 FDV303N

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 680 MA, 25 V, 3-Pin SOT-23 FDV303N

Category
Instockinstock

Last Updated

Onsemi N-Channel MOSFET, 680 MA, 25 V, 3-Pin SOT-23 FDV303N
More Varieties

Rating :- 9.87 /10
Votes :- 10