Infineon N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7807ZTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 18.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.25V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Length: 5mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7807ZTRPBF
Specifications of Infineon N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7807ZTRPBF | |
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