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Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35ATMA1

About The Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 IPG20N10S4L35ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V, Series: OptiMOS

Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 IPG20N10S4L35ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 16V, Series: OptiMOS

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35ATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35ATMA1

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Infineon Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 X 6 IPG20N10S4L35ATMA1
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