Vishay N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK SIHB12N60E-GE3
About The 67mm, Maximum Operating Temperature: +150 °C.Vishay N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK SIHB12N60E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 147 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10
Vishay N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK SIHB12N60E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 147 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK SIHB12N60E-GE3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Vishay N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK SIHB12N60E-GE3 | |
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