ROHM N-Channel MOSFET, 200 MA, 50 V, 3-Pin SOT-23 RYC002N05T316
About The 2V.ROHM N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 RYC002N05T316, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0
ROHM N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 RYC002N05T316, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.8V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Forward Diode Voltage: 1.2V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM N-Channel MOSFET, 200 MA, 50 V, 3-Pin SOT-23 RYC002N05T316
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of ROHM N-Channel MOSFET, 200 MA, 50 V, 3-Pin SOT-23 RYC002N05T316 | |
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