Infineon N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB IRL1004PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Maximum Operating Temperature: +175 °C
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Infineon N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB IRL1004PBF
Specifications of Infineon N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB IRL1004PBF | |
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