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Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF

About The Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 20V, Series: StrongIRFET

Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 20V, Series: StrongIRFET

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF

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Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF
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    • Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF

    Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF

    Infineon Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V DirectFET ISOMETRIC IRF6613TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0035 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 20V, Series: StrongIRFET.

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