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Infineon N-Channel MOSFET, 195 A, 317 A, 40 V, 3-Pin D2PAK AUIRFS8408

About The 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.Infineon N-Channel MOSFET, 195 A, 317 A, 40 V, 3-Pin D2PAK AUIRFS8408, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1

Infineon N-Channel MOSFET, 195 A, 317 A, 40 V, 3-Pin D2PAK AUIRFS8408, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 294 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 195 A, 317 A, 40 V, 3-Pin D2PAK AUIRFS8408

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 195 A, 317 A, 40 V, 3-Pin D2PAK AUIRFS8408

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Infineon N-Channel MOSFET, 195 A, 317 A, 40 V, 3-Pin D2PAK AUIRFS8408
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