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Onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

About The onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.73mm

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

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Onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860
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