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Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120

About The Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 42 mO, Maximum Gate Threshold Voltage: 2V

Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 42 mO, Maximum Gate Threshold Voltage: 2V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120

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Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120
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    • Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120

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    5 A, 80 V, 6-Pin DFN2020 IRL80HS120, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 42 mO, Maximum Gate Threshold Voltage: 2V.Infineon N-Channel MOSFET, 12.

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    • Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120

    Infineon N-Channel MOSFET, 12.5 A, 80 V, 6-Pin DFN2020 IRL80HS120

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