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Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3

About The Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10.73mm

Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 48.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.38mm, Length: 6.73mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3

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Vishay N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50N04-8M8P-4GE3
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