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Onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512

About The onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 141 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm

onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 141 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512

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Onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512
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    onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512

    onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 141 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm.

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    • onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512

    onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512

    onsemi N-Channel MOSFET, 3 A, 80 V, 6-Pin SOT-23 FDC3512, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 141 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm.

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