Toshiba N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS TK42A12N1,S4X(S
About The 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +150 °C.Toshiba N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS TK42A12N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9
Toshiba N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS TK42A12N1,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Toshiba N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS TK42A12N1,S4X(S
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Toshiba N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS TK42A12N1,S4X(S | |
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