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ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511KND3TL1

About The ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511KND3TL1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511KND3TL1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511KND3TL1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511KND3TL1

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ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511KND3TL1
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