Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1
About The 5V, Maximum Power Dissipation: 1.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 82 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0
Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 82 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.5V, Maximum Power Dissipation: 1.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 1mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1 | |
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