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Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3

About The Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Maximum Operating Temperature: +150 °C

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3

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Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3
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