Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3
Specifications of Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3 | |
---|---|
Category | |
Instock | instock |
Last Updated