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DiodesZetex Dual N-Channel MOSFET, 318 MA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7

About The 5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2.DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3

DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2

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DiodesZetex Dual N-Channel MOSFET, 318 MA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex Dual N-Channel MOSFET, 318 MA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7

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DiodesZetex Dual N-Channel MOSFET, 318 MA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7
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    • DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7

    DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7

    DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.

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    • DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7

    DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7

    5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2.DiodesZetex Dual N-Channel MOSFET, 318 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN61D9UDWQ-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.

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