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Onsemi P-Channel MOSFET, 870 MA, 20 V, 3-Pin SOT-723 NTK3139PT1G

About The 2V, Maximum Power Dissipation: 550 mW, Maximum Gate Source Voltage: -6 V, +6 V, Length: 1.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1

onsemi P-Channel MOSFET, 870 mA, 20 V, 3-Pin SOT-723 NTK3139PT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 550 mW, Maximum Gate Source Voltage: -6 V, +6 V, Length: 1.25mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi P-Channel MOSFET, 870 MA, 20 V, 3-Pin SOT-723 NTK3139PT1G

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi P-Channel MOSFET, 870 MA, 20 V, 3-Pin SOT-723 NTK3139PT1G

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Onsemi P-Channel MOSFET, 870 MA, 20 V, 3-Pin SOT-723 NTK3139PT1G
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