Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD048N06L3GBTMA1
About The Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD048N06L3GBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.2V, Height: 2
Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD048N06L3GBTMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.2 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 115 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 2.41mm, Length: 6.73mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD048N06L3GBTMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 90 A, 60 V, 3-Pin DPAK IPD048N06L3GBTMA1 | |
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