Onsemi N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 FCP165N65S3
About The onsemi N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 FCP165N65S3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 165 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2
onsemi N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 FCP165N65S3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 165 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 154 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 10.67mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 FCP165N65S3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 FCP165N65S3 | |
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