Vishay P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 SQ2361ES-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -2.5V, Minimum Gate Threshold Voltage: -1.5V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Length: 3.04mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 SQ2361ES-T1_GE3
Specifications of Vishay P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 SQ2361ES-T1_GE3 | |
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