Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 160 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 176 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1
Specifications of Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1 | |
---|---|
Category | |
Instock | instock |
Last Updated