Vishay N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.391 Ω, Maximum Gate Threshold Voltage: 2 → 4V
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Vishay N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3
Specifications of Vishay N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3 | |
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