reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
MOSFETs
onsemi

Onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ

About The onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 5mm, Maximum Operating Temperature: +150 °C

onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ

Category
Instockinstock

Last Updated

Onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ
More Varieties

Rating :- 9.89 /10
Votes :- 9