onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 5mm, Maximum Operating Temperature: +150 °C
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Onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ
Specifications of Onsemi P-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC FDS6675BZ | |
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