onsemi Dual P-Channel MOSFET, 2.3 A, 20 V, 6-Pin SOT-23 FDC6312P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 115 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm, Length: 3mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual P-Channel MOSFET, 2.3 A, 20 V, 6-Pin SOT-23 FDC6312P
Specifications of Onsemi Dual P-Channel MOSFET, 2.3 A, 20 V, 6-Pin SOT-23 FDC6312P | |
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