onsemi N-Channel MOSFET, 11 A, 600 V, 3-Pin D2PAK FCB11N60TM, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 380 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 4.83mm, Length: 10.67mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 11 A, 600 V, 3-Pin D2PAK FCB11N60TM
Specifications of Onsemi N-Channel MOSFET, 11 A, 600 V, 3-Pin D2PAK FCB11N60TM | |
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