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IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

About The IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.13mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

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IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3
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