Infineon N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF

54mm Pitch, MPN: ESQ-105-12-S-D.

Festo NPQH Series Straight Tube-to-Tube Adaptor, Push In 6 mm to Push In 6 mm, Tube-to-Tube Connection Style, 578318, Body Material: Nickel Plated Brass, Chemical Resistant: Yes, Maximum Operating Pressure: 20 bar, Maximum Operating Temperature: +150°C, MPN: NPQH-D-S6-E-P10.

KOA 33Ω Metal Film Resistor 0.5W ±1% MFS1/2CCT52A33R0F, Maximum Operating Temperature: +155°C, Temperature Coefficient: ±50ppm/°C, Minimum Operating Temperature: -55°C.

Druck PM 620-13A-4685 Pressure Module, For Use With DPI 620 Series, Accessory Type: Absolute Pressure Module, Pressure Range: 0 to 20 bar.

0mm Pitch, 2 Row(s), Shrouded, Pitch: 3mm, Connector System: Wire to Board, Termination Method: Solder, Contact Material: Brass, Contact Plating: Tin, Current Rating: 5A, MPN: 3-794630-8.TE Connectivity Micro MATE-N-LOK Series Straight Through Hole PCB Header, 8 Contact(s), 3.

5W ±1% MFS1/2CCT52A1502F, Maximum Operating Temperature: +155°C, Temperature Coefficient: ±50ppm/°C, Minimum Operating Temperature: -55°C.KOA 15kΩ Metal Film Resistor 0.

7 A, 100 V, 3-Pin TO-220AB IRF520NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 48 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.54mm, Maximum Operating Temperature: +175 °C.

Infineon N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 48 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Maximum Operating Temperature: +175 °C.

54mm, Maximum Operating Temperature: +175 °C.Infineon N-Channel MOSFET, 9.

Infineon N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 48 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Maximum Operating Temperature: +175 °C.