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Infineon N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF

About The 7 A, 100 V, 3-Pin TO-220AB IRF520NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 48 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Infineon N-Channel MOSFET, 9

Infineon N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 48 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.54mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF

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Infineon N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB IRF520NPBF
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