Onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06
About The 1mm.38mm, Length: 10
onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 231 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.38mm, Length: 10.1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 FDP030N06 | |
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