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Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5

About The 5V.014 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2

Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.014 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

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Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5

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Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5
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    • Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5

    Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5

    014 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V.Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.

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    • Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5

    Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5

    Renesas Electronics Silicon N-Channel MOSFET, 25 A, 60 V, 4-Pin LFPAK, SOT-669 Renesas RJK0651DPB-00#J5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.014 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.

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