reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Electronic Components & Power & Connectors
Semiconductors
Discrete Semiconductors
MOSFETs
Infineon

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

About The Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 225 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5.35mm, Maximum Operating Temperature: +150 °C

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 225 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 34 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5.35mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1

Category
Instockinstock

Last Updated

Infineon N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1
More Varieties

Rating :- 9.78 /10
Votes :- 10