ROHM N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.36 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 10.3mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX
Specifications of ROHM N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX | |
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