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Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3

About The 51mm, Maximum Operating Temperature: +175 °C.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.51mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3

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Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
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