Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor, 50 MA, 4.1 V, 4-Pin SOT-343
About The 25 x 0.1 V, 4-Pin SOT-343, Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 4
Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343, Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 4.8 V, Maximum Emitter Base Voltage: 0.5 V, Maximum Operating Frequency: 45 GHz, Dimensions: 2 x 1.25 x 0.9mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors
Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor, 50 MA, 4.1 V, 4-Pin SOT-343
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors
Specifications of Infineon BFP640ESDH6327XTSA1 NPN RF Bipolar Transistor, 50 MA, 4.1 V, 4-Pin SOT-343 | |
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