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Onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW8 NVMTS0D7N06CLTXG

About The 5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 294.onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW8 NVMTS0D7N06CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2

onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW8 NVMTS0D7N06CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 294.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW8 NVMTS0D7N06CLTXG

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW8 NVMTS0D7N06CLTXG

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Onsemi N-Channel MOSFET, 477 A, 60 V, 8-Pin DFNW8 NVMTS0D7N06CLTXG
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