ROHM N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK RJ1G08CGNTLL, Package Type: TO-263AB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 78 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 10.4mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK RJ1G08CGNTLL
Specifications of ROHM N-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK RJ1G08CGNTLL | |
---|---|
Category | |
Instock | instock |
Last Updated