ROHM N-Channel MOSFET, 24 A, 600 V, 3-Pin D2PAK R6024ENJTL, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 245 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 10.4mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM N-Channel MOSFET, 24 A, 600 V, 3-Pin D2PAK R6024ENJTL
Specifications of ROHM N-Channel MOSFET, 24 A, 600 V, 3-Pin D2PAK R6024ENJTL | |
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