ROHM P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.25 W, Transistor Configuration: Dual Base, Maximum Gate Source Voltage: -18 V, +18 V, Length: 3mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR
Specifications of ROHM P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR | |
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