Infineon N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP IPAW60R600CEXKSA1, Package Type: TO-220FP, Mounting Type: Through Hole, Pin Count: 3 + Tab, Maximum Drain Source Resistance: 1.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP IPAW60R600CEXKSA1
Specifications of Infineon N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP IPAW60R600CEXKSA1 | |
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