onsemi N-Channel MOSFET, 133 A, 60 V, 5-Pin DFN NVMFS5C638NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 100 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 133 A, 60 V, 5-Pin DFN NVMFS5C638NLT1G
Specifications of Onsemi N-Channel MOSFET, 133 A, 60 V, 5-Pin DFN NVMFS5C638NLT1G | |
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