Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin TDSON BSC010NE2LSATMA1
About The 3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 96 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin TDSON BSC010NE2LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1
Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin TDSON BSC010NE2LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 96 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.1mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin TDSON BSC010NE2LSATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 100 A, 25 V, 8-Pin TDSON BSC010NE2LSATMA1 | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.78 /10
Votes :- 9
