IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXFN140N20P
About The IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXFN140N20P, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 680 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 38.23mm, Maximum Operating Temperature: +175 °C
IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXFN140N20P, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 18 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 680 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 38.23mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXFN140N20P
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of IXYS N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXFN140N20P | |
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