Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40020EL_GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 10.41mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40020EL_GE3
Specifications of Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40020EL_GE3 | |
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