onsemi N-Channel MOSFET, 24 A, 650 V, 4-Pin PQFN4 FCMT125N65S3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 181 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 8mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 24 A, 650 V, 4-Pin PQFN4 FCMT125N65S3
Specifications of Onsemi N-Channel MOSFET, 24 A, 650 V, 4-Pin PQFN4 FCMT125N65S3 | |
---|---|
Category | |
Instock | instock |
Last Updated