IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 460 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 16.26mm, Maximum Operating Temperature: +150 °C
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IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P
Specifications of IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P | |
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