Vishay N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC SIHG20N50E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 179 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 15.87mm, Maximum Operating Temperature: +150 °C
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Vishay N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC SIHG20N50E-GE3
Specifications of Vishay N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-247AC SIHG20N50E-GE3 | |
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